Inspection method for semiconductor laser
文献类型：专利
| 作者 | OBE ISAO; TODOROKI SATORU |
| 发表日期 | 1986-12-11 |
| 专利号 | JP1986281570A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Inspection method for semiconductor laser |
| 英文摘要 | PURPOSE:To decide the nondefectives or defectives of semiconductor-laser wafers by detecting discharge currents generated from the semiconductor-laser wafers by applying pulse-shaped voltage between electrodes. CONSTITUTION:A whole surface electrode is formed onto the surface of a substrate as a semiconductor-laser wafer 5 and partial electrodes 3 onto the surface on the side reverse to the substrate in a striped manner, and the wafer 5 prepared in this manner is connected to an external circuit through a prober 4. The external circuit consists of a power supply 1 and a current detector 2 connected in series with the power supply Pulse voltage is applied to the semiconductor-laser wafer by the power supply 1, and an optical output is detected by a photodiode composed of Ge. When a threshold current value is increased, discharge currents are reduced, and negative correlation is generated. Accordingly, the threshold current values of laser oscillations can be determined under the state of wafers without cleavage by measuring the discharge currents of the semiconductor-laser wafers, thus deciding nondefectives or defectives by the threshold currents values at the step of the wafer. |
| 公开日期 | 1986-12-11 |
| 申请日期 | 1985-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OBE ISAO,TODOROKI SATORU. Inspection method for semiconductor laser. JP1986281570A. 1986-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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