Selection of single axial mode semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1989-03-08 |
| 专利号 | JP1989061078A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Selection of single axial mode semiconductor laser |
| 英文摘要 | PURPOSE:To select and remove elements of a single axial mode characteristic unstable with time by performing a heat cycle test on single axial mode semiconductor laser welded to a heat absorber by fusion and measuring changes of the output light spectrum characteristic. CONSTITUTION:A heat cycle test performed on single axial mode semiconductor laser welded to a heat absorber by fusion. A submode suppression ratio of the single axial mode semiconductor laser before and after the heat cycle test is compared. The heat cycle test is repeated at low temperature of -65 deg.C and high temperature of 150 deg.C, a cycle of repetition is 60 minutes, the holding time at each of the low temperature and high temperature is at least 20 minutes or longer, and the number of repetition is at least 10 or more. Therefore, elements of single axial mode characteristics unstable with time are selected and removed without generating unnecessary accelerated deterioration. |
| 公开日期 | 1989-03-08 |
| 申请日期 | 1987-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62613]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Selection of single axial mode semiconductor laser. JP1989061078A. 1989-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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