Characteristic measuring device for semiconductor laser diode
文献类型：专利
| 作者 | KASAHARA MASAO; WAKABAYASHI SHINICHI; NEGISHI HIDEHIKO |
| 发表日期 | 1989-03-27 |
| 专利号 | JP1989081384A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Characteristic measuring device for semiconductor laser diode |
| 英文摘要 | PURPOSE:To simplify a work at the time of removing, attaching, replacing leads at the time of measuring characteristics, and to reduce the possibility of breaking down due to the application of a surge current by providing a plurality of opening/closing switches connected in parallel to a plurality of semiconductor laser diodes, and a changeover switch for sorting a symmetrical semiconductor laser diode to be measured from the diodes. CONSTITUTION:In order to measure various characteristics of semiconductor laser diodes 1-3, it is confirmed that switches 4-6 are closed, and power terminals 13, 15 are connected to a current source. When a laser diode to be measured is represented by '1', the contact of a switch 7 is '8', the switch 4 is opened, a current is applied between the terminals 13 and 15, and a driving current in this case is monitored by a voltage between the terminals of a resistor 12 or 14. This driving current is gradually increased from zero, and the emitting output of the diode 1 is measured. After the various characteristics are completely measured, the opening/closing switch is again closed to protect the diodes against a surge current. |
| 公开日期 | 1989-03-27 |
| 申请日期 | 1987-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62615]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KASAHARA MASAO,WAKABAYASHI SHINICHI,NEGISHI HIDEHIKO. Characteristic measuring device for semiconductor laser diode. JP1989081384A. 1989-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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