中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Measuring device for semiconductor laser

文献类型:专利

作者NAKANO MUNEAKI; WADA MASARU
发表日期1989-07-26
专利号JP1989186694A
著作权人MATSUSHITA ELECTRIC IND CO LTD
国家日本
文献子类发明申请
其他题名Measuring device for semiconductor laser
英文摘要PURPOSE:To measure the expansion angle of a laser beam in the state of a chip, by mounting a detector through which a rear light can be measured by the expansion angle when the inspected of a semiconductor laser is made. CONSTITUTION:A chip-like semiconductor laser 2 is sucked by a vacuum pincette 1 and is set on an electrode 3. This device allows the vacuum pincette 1 to serve as one of the electrodes and a pulse voltage to be impressed between this electrode and the other electrode 3. Then, the value of a current flowing in the semiconductor laser device is measured to obtain current-voltage characteristics. Simultaneously, light output in the forward is measured by a detector 4 for measuring light output to obtain current-light output characteristics. On the other hand, in a state that a constant voltage is applied to the chip of the laser device by pulse, a far-field pattern in the horizontal direction is measured by turning in the direction of the arrow A circular-arcwise a movable detector 5 for measuring the far-field pattern that is arranged and mounted in the rear side and the far-field pattern in the vertical direction is measured by turning the detector 5 in the direction of the arrow B. In this way, the expansion angle of the beam can be measured from a half value angle for its far-field pattern.
公开日期1989-07-26
申请日期1988-01-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/62616]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
NAKANO MUNEAKI,WADA MASARU. Measuring device for semiconductor laser. JP1989186694A. 1989-07-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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