中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Inspection of semiconductor laser

文献类型:专利

作者TADA KATSUHISA; YAMASHITA KOJI
发表日期1992-07-28
专利号JP1992206944A
著作权人MITSUBISHI ELECTRIC CORP
国家日本
文献子类发明申请
其他题名Inspection of semiconductor laser
英文摘要PURPOSE:To lower a load TS of harmonic distortion inspection and to raise an yield by applying a DC bias and low frequency modulation signal to a chip and measure harmonic distortion to select good and defective chips. CONSTITUTION:A DC bias is applied to a chip 1 with a DC power supply 4 and a modulation signal as low as about 100Hz is applied also thereto with a signal generator 5. In this case, a photodiode 6 receives a modulation beam from the chip and its electrical signal is inputted to a spectrum analyzer 7. Next, the waveforms of signal intensity in the frequency of 100Hz, signal intensity in the frequency of 200Hz and signal intensity in the frequency of 300Hz on the spectrum analyzer 7 are observed, harmonic distortion such as 2nd order distortion H2, 3rd order distortion H3, etc., is obtained and good and defective chips are selected under the condition that the measuring result of harmonic distortion are as follow; H2>60dBc, H3>70dBc. The yield of harmonic distortion inspection after packing the chip into a package is raised and thereby a load TS of harmonic distortion inspection is lowered.
公开日期1992-07-28
申请日期1990-11-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/62628]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORP
推荐引用方式
GB/T 7714
TADA KATSUHISA,YAMASHITA KOJI. Inspection of semiconductor laser. JP1992206944A. 1992-07-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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