Method of making and testing a semiconductor device
文献类型：专利
| 作者 | BETHEA, CLYDE GEORGE |
| 发表日期 | 1994-10-05 |
| 专利号 | EP0618455A2 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of making and testing a semiconductor device |
| 英文摘要 | The inventive methods of making a semiconductor device, e.g., a laser, comprise thermal (e.g., 3-5 µm wavelength) imaging of a powered, partially completed device. The thermal image is obtained with apparatus that is capable of forming a substantially diffraction-limited image on a sensor array with an acquisition time of no more than 0.1 seconds, preferable no more than 0.01 seconds. In preferred embodiments, the image has temperature resolution of 0.01°C or better. Exemplary apparatus is disclosed. The inventive method facilitates, for instance, early identification of devices that are likely to fail lifetime requirements. |
| 公开日期 | 1994-10-05 |
| 申请日期 | 1994-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62637]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | BETHEA, CLYDE GEORGE. Method of making and testing a semiconductor device. EP0618455A2. 1994-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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