Production of semiconductor device
文献类型：专利
| 作者 | OOSAKA SHIGEO; FUJIWARA KANJI |
| 发表日期 | 1979-07-16 |
| 专利号 | JP1979089489A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor device |
| 英文摘要 | PURPOSE:To prevent effluence of eutectic alloy at the melting and eliminate the occurrence of shortcircuit accident by beforehand forming an inert protection film such as of Si, Ge or other on chip surface at the time of securing a semiconductor chip and heat sink. CONSTITUTION:After an Au electrode 3 is deposited via metal film 2 for ohmic contact on the mesa top of a semiconductor chip 1' of mesa form, a polycrystalline Si film 7 is deposited by a CVD method over the entire surface on this side. At this time, the formation of the film 7 is accomplished by thermal decomposition of SiH4, but to avoid its entectic with the electrode 3, slight boron is beforehand added and with the temoerature being kept at about 300 deg.C a surface protecting film being mostly an insulator is formed. Thereafter the substrate is diced to a chip 1, which is then placed on its film 7 with a heat sink 6 on whose butt surface is deposited an Au film 5. Both are heat treated at above 370 deg.C to fuse the sink 6 and film 7. At this time, the film 7 and the electrode 5 and film 5 produce an eutectic alloy part 8, but because of the interposition of the film 7 it does not flow out to the mesa part and shortcircuiting will not occur. |
| 公开日期 | 1979-07-16 |
| 申请日期 | 1977-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,FUJIWARA KANJI. Production of semiconductor device. JP1979089489A. 1979-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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