Injectionntype double hetero junction laser element
文献类型：专利
| 作者 | YONEZU HIROO |
| 发表日期 | 1979-08-22 |
| 专利号 | JP1979107282A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Injectionntype double hetero junction laser element |
| 英文摘要 | PURPOSE:To obtain a good heat radiation and a large output operation and improve reliability by providing a plating heat sink having a sufficient thickness. CONSTITUTION:The double hetero structure of n-Al0.3Ga0.7 As layer 2, n-GaAs active layer 3 and n-Al0.3Ga0.7 As layer 4 is formed on n-type GaAs substrate 1, and stripe region 6 where Zn is selectively diffused on the boundary between layers 3 and 2 or below this boundary is provided through windows opened in sputter SiO2 film 5. Photo resistor film 9 is applied onto p-type ohmic electrode 8 uniformly, and a window is provided at the center of strip 6. Consequently, the line direction of region 11 where the photo resistor is left faces toward the cleavage direction of , and meanwhile, n-type ohmic electrode 12 is provided on all the surface of n-type GaAs substrate After covering the surface with n-type electrode 12, Au thick plating layer 13 is formed by electrolytic plating. |
| 公开日期 | 1979-08-22 |
| 申请日期 | 1978-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62769]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | YONEZU HIROO. Injectionntype double hetero junction laser element. JP1979107282A. 1979-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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