Method of fabricating semiconductor laser device
文献类型：专利
| 作者 | KOSETO MASARU; YOSHIKAWA MITSUO; DOI SHIYOUJI |
| 发表日期 | 1980-10-30 |
| 专利号 | JP1980138890A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating semiconductor laser device |
| 英文摘要 | PURPOSE:To intake and remove excessive adhesive flown on the surface to be adhered of light emitting side of a semiconductor laser element to be fixed with the adhesive onto a heat dissipating support by an intake unit when adhering the element onto the support by disposing vacuum intake unit at the intake opening facing with the surface to be adhered of the laser element in the vicinity of the opening. CONSTITUTION:A vacuum intake unit 12 is installed at the side surface of a fixing jig 11, and the intake opening 13 thereof is so located as to face with the surface to be adhered of a semiconductor laser element 2 to be fixed with adhesive to a heat dissipating support 1 in the vicinity of the opening 13. In this state an adhesive layer 5 made of indium is formed in advance on a copper heat dissipating support 1, and the support 1 is arranged on the jig 1 Then, the support 1 is heated to approx. 150 deg.C to melt the adhesive layer 5, namely, indium adhered onto the support 1, the element 2 is then pressed onto the predetermined position. In this case, excessive indium flown to the surface to be adhered for emitting light is intaken and removed by the opening 13 of the vacuum intake unit 12 disposed oppositely thereto. Thereafter, the support 1 is cooled and, the laser element1 is secured thereto. |
| 公开日期 | 1980-10-30 |
| 申请日期 | 1979-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOSETO MASARU,YOSHIKAWA MITSUO,DOI SHIYOUJI. Method of fabricating semiconductor laser device. JP1980138890A. 1980-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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