Vapor-phase growing device for compound semiconductor
文献类型：专利
| 作者 | IWAMOTO MASAMI; KONNO KUNIAKI; BETSUPU TATSUROU |
| 发表日期 | 1982-02-13 |
| 专利号 | JP1982027016A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor-phase growing device for compound semiconductor |
| 英文摘要 | PURPOSE:To accomplish the multilayer vapor-phase growth having a steep compositional change by a method wherein the control stick, which was bent on the side where substrate support is coupled, is rotated along the center axis of a reaction tube and a crystalline substrate is shifted between two vapor-phase growing chambers for a short time. CONSTITUTION:The upper and lower vapor-phase growing chambers are provided by dividing a quartz reaction tube 2-2 using a partition plate 2-5. On the other hand, one side of a quartz control stick 2-7, extending along the center axis of the reaction tube 2-2, is bent and at the point of which, a quartz support 2-8 which is fixing the crystalline substrate 206 is coupled. Then, the substrate 2-6 is arranged on the crystal deposited region A of each vapor-phase growing chamber, wherein reaction gas having a different composition is flowing, the control stick 2-7 is rotated for the center axis at the same time, and each vapor-phase growing chamber is shifted. Through these procedures, the crystalline substrate can be shifted between each vapor-phase growing chamber in a very short time, thereby enabling to accomplish the growing of multilayer vapor-phase having a steep compositional change. |
| 公开日期 | 1982-02-13 |
| 申请日期 | 1980-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | IWAMOTO MASAMI,KONNO KUNIAKI,BETSUPU TATSUROU. Vapor-phase growing device for compound semiconductor. JP1982027016A. 1982-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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