Semiconductor laser devie
文献类型:专利
| 作者 | KONDOU MITSUSHIGE |
| 发表日期 | 1982-04-17 |
| 专利号 | JP1982063886A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser devie |
| 英文摘要 | PURPOSE:To make it possible to conduct fine adjustment on at least either one of emitting angle or emitting position of a semiconductor laser, by using a heatradiating plate which employs a variable shape at least for a neighboring area of the section where the semiconductor laser is attached. CONSTITUTION:A heat-radiating plate 6 is made of such a substance as copper or brass, etc. The heat-radiating plate 6 is made into such a structure that surrounding area of through hole in which a semiconductor laser 1 is fixed is thinner than other parts of plate. Further, an annular adjusting device 7 is fixed onto this heat- radiating plate 6. An adjustment is made in such a manner as to set emitting angle of laser light from the semiconductor laser 1 onto optical axis of a collimator lens 3 by trying to tighten or loosen four pieces of screws 8 individually so that variable- shape section of the heat-radiating plate 6 can be deformed appropriately. |
| 公开日期 | 1982-04-17 |
| 申请日期 | 1980-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62809] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KONDOU MITSUSHIGE. Semiconductor laser devie. JP1982063886A. 1982-04-17. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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