中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser devie

文献类型:专利

作者KONDOU MITSUSHIGE
发表日期1982-04-17
专利号JP1982063886A
著作权人MITSUBISHI DENKI KK
国家日本
文献子类发明申请
其他题名Semiconductor laser devie
英文摘要PURPOSE:To make it possible to conduct fine adjustment on at least either one of emitting angle or emitting position of a semiconductor laser, by using a heatradiating plate which employs a variable shape at least for a neighboring area of the section where the semiconductor laser is attached. CONSTITUTION:A heat-radiating plate 6 is made of such a substance as copper or brass, etc. The heat-radiating plate 6 is made into such a structure that surrounding area of through hole in which a semiconductor laser 1 is fixed is thinner than other parts of plate. Further, an annular adjusting device 7 is fixed onto this heat- radiating plate 6. An adjustment is made in such a manner as to set emitting angle of laser light from the semiconductor laser 1 onto optical axis of a collimator lens 3 by trying to tighten or loosen four pieces of screws 8 individually so that variable- shape section of the heat-radiating plate 6 can be deformed appropriately.
公开日期1982-04-17
申请日期1980-10-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/62809]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KK
推荐引用方式
GB/T 7714
KONDOU MITSUSHIGE. Semiconductor laser devie. JP1982063886A. 1982-04-17.

入库方式: OAI收割

来源:西安光学精密机械研究所

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