Manufacture of heat radiator for semiconductor laser device
文献类型：专利
| 作者 | NITSUTA SHIGEYUKI |
| 发表日期 | 1982-05-12 |
| 专利号 | JP1982075485A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of heat radiator for semiconductor laser device |
| 英文摘要 | PURPOSE:To simplify the manufacture of a heat radiator and to improve the die bonding of a laser device by a method wherein metals having good thermal conductivity and thermal expansion coefficient close to that of a semiconductor laser chip are previously adhered to a metal such as copper and the adhered metals are unitedly cut. CONSTITUTION:Belt-shaped metals 12 such as molybdenum having thermal expansion coefficient close to the that of a semiconductor chip 3 and good thermal conductivity comparing with that of silicon are adhered on a metal plate 11 having good thermal conductivity such as copper at fixed intervals. The metal plate 11 and the metals 12 are united at the line 13 dividing the metals 12 into two in the belt-shaped direction and the lines 14 crossing with the line 13 at right angles and cut at fixed intervals to manufacture a metal 22 serving as a plurality of heat sinks. Die bonding is applied to a laser chip 3 and a heat radiator made by the above process. Uneveness at the interface between the metal plates 21 and 22 is eliminated by simultaneously cutting the metal plates 21 and 22 and die bonding is made possible by only positioning the laser chip 3 to the metal plate 22 and the radiating point of light emitted from the end surface 4 and the direction of light are controlled with good accuracy. |
| 公开日期 | 1982-05-12 |
| 申请日期 | 1980-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | NITSUTA SHIGEYUKI. Manufacture of heat radiator for semiconductor laser device. JP1982075485A. 1982-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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