Semiconductor laser module device
文献类型：专利
| 作者 | SARUWATARI MASATOSHI |
| 发表日期 | 1982-05-24 |
| 专利号 | JP1982083080A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser module device |
| 英文摘要 | PURPOSE:To eliminate a reflection in a coupling region between an optical fiber and a laser light by a method wherein a window thickness of a laser package is preferred to be 1/4 of a wave length and its optical axis is slanted to show an angle of 45 deg. in a perpendicular plane to a polarizing direction of the light from a laser chip. CONSTITUTION:A laser light 23 is a linear polarized wave parallel to a junction plane. A polarizing direction is taken as x axis, and a plate 24 having a thickness of 1/4 of a wave length is placed on it. Because an optical axis 25 is slanted to show 45 deg. to the x axis, the light is reflected at a surface 27 through being converted into a clockwise circular polarized light 26, and it is changed by second passing through the plate 24 having a thickness of 1/4 of a wave length, into a linear polarized wave 29 which has perpendicular relation to the initial linear polarized light. Accordingly when a plate having a thickness of 1/4 of a wave length is inserted at the rear stage of a laser through preferring an axial direction, as easy separation of a reflected light returning to the laser can be attained, and a coupling efficiency is not expended as a sacrifice. In an embodiment, a hermetic window 17 is built of a plate having thickness of 1/4 of a wave length made of sapphire and is fixed by soldering so that an optical axis 25 of sapphire may be taken to be slanted at 45 deg. referring to an active layer of the laser 15 when hermetically sealed. In this constitution reflection from an incident surface of the fiber 18 is very low and is made lower with an additional utilization of anti-reflection film. |
| 公开日期 | 1982-05-24 |
| 申请日期 | 1980-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62812]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | SARUWATARI MASATOSHI. Semiconductor laser module device. JP1982083080A. 1982-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。