Gallium-arsenic semiconductor element
文献类型：专利
| 作者 | SHIMAZAKI MASAHIKO; KOSEMURA KINSHIROU |
| 发表日期 | 1982-06-29 |
| 专利号 | JP1982104285A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Gallium-arsenic semiconductor element |
| 英文摘要 | PURPOSE:To improve the high-frequncy output characteristics of a GaAs element by forming a metal layer for checking reaction and a metal layer for preventing oxidation on the exposed surface of a thick plating heat sink layer provided at the rear of a chip. CONSTITUTION:A heat sink 12 consisting of a thick Au layer is formed after evaporating an Au-Ge electrode 13 and an Au layer 14 on the rear of a GaAs substrate 11 having a surface electrode 17 by an electroplating method. Next, a metal layer 15 for checking reaction of Ni or the like and a metal layer 16 for preventing oxidation are provided on the exposed surface of the heat sink 12 and the plating layer is blazed to the metal base of a high-frequency package. In this way, variations in thermal resistance are removed and those in the inductance of a wire are also removed and high-frequency output characteristics will be improved. |
| 公开日期 | 1982-06-29 |
| 申请日期 | 1980-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMAZAKI MASAHIKO,KOSEMURA KINSHIROU. Gallium-arsenic semiconductor element. JP1982104285A. 1982-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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