Semiconductor luminous device incorporated with photodetector
文献类型：专利
| 作者 | SAKAKI SHIGEO |
| 发表日期 | 1982-10-02 |
| 专利号 | JP1982160189A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminous device incorporated with photodetector |
| 英文摘要 | PURPOSE:To contrive the reduction of assembly cost, noise prevention and the facilitation of the control of received light quantity, by forming a light emitting device and photo detector in laminated structure so that the light receiving surface of the photodetector becomes parallel with the direction of luminous radiation from the semiconductor light emitting device. CONSTITUTION:A laser diode 3 as the light emitting device and photodiode 4 as the photo detector are positioned on the same main surface of a heat sink 2. As the result, the light receiving surface of the photo detector becomes parallel with the direction of luminous radiation from the light emitting device. In this case, the P-N junction surface of the laser diode and that of the photo diode are in parallel relation based on the main surface of the heat sink. A part of luminous radiation from the side surface of the laser diode makes oblique incidence on the upper surface of the photo diode at an angle theta to detect the output by the excitation of the P-N junction provided shallowly on the surface layer. |
| 公开日期 | 1982-10-02 |
| 申请日期 | 1981-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62823]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAKAKI SHIGEO. Semiconductor luminous device incorporated with photodetector. JP1982160189A. 1982-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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