Semiconductor luminous element and manufacture thereof
文献类型：专利
| 作者 | BETSUPU TATSUROU |
| 发表日期 | 1982-12-07 |
| 专利号 | JP1982199287A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminous element and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture the negative resistant semiconductor element provided with the reliable characteristics by a method wherein thickness of the semiconductor crystal layer is capacitated for arcing into the stripe type at specified region by means of the impressed voltage as specified. CONSTITUTION:The stripe type mesa 2 is formed on the n type GaAs substrate crystal 1 not yet immersed in the liquidus growing boat while the liquidus growing solution is specified to be the Ga solution containing the p type impurities saturated with As. Then the Ga solution is liquidus grown at the specified temperature and cooling speed separating the p type GaAs layer 14 on the n type GaAs substrate crystal Then after the n type GaAlAs layer 4, p or n type GaAs layer 5, p type GaAlAs layer 6 are successively crystal formed by the solution contaiing the different dopants, the semiconductor crystal layer is separated at the central part of the cavity of the mesa 2. |
| 公开日期 | 1982-12-07 |
| 申请日期 | 1981-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62826]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | BETSUPU TATSUROU. Semiconductor luminous element and manufacture thereof. JP1982199287A. 1982-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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