Semiconductor laser-photodetector beam integrate element
文献类型：专利
| 作者 | KITAMURA MITSUHIRO; KOBAYASHI ISAO; SUGIMOTO SHIGETOKI |
| 发表日期 | 1983-05-20 |
| 专利号 | JP1983084486A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser-photodetector beam integrate element |
| 英文摘要 | PURPOSE:To remove the reinjection of reflected light from the light receiving surface of a photodetector to a semiconductor laser, and to eliminate the reflecting noises of the photodetector by making a distance between the light receiving surface and a laser resonator surface opposite to the light receiving surface the shortest in the uicinity of a laser resonant axis. CONSTITUTION:One resonator surface 105 of the hetero-structure semiconductor laser (BH-LD) 101 is formed through an etching method, and the photodetector (PD) 102 is arranged as a photodetector monitoring laser beams 110 from the surface while being opposed to the surface 105. Here, the light receiving surface 106 of the PD takes convex shape toward the so-called BH-LD 101 so that the distance between the light receiving surface and the laser resonator surface is made the shortest near the laser resonant axis. Accordingly, the combination of BH-LD and PD results in the extremely small generation of reflecting noises. The efficiency of light reception is improved as compared to the light receiving surface of a plane because the convex light receiving surface 106 of the PD 102 focuses laser beams 110 and couples them with the PD 102 by its lens action. |
| 公开日期 | 1983-05-20 |
| 申请日期 | 1981-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62837]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,KOBAYASHI ISAO,SUGIMOTO SHIGETOKI. Semiconductor laser-photodetector beam integrate element. JP1983084486A. 1983-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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