High output semiconductor laser element
文献类型：专利
| 作者 | NOGUCHI ETSUO; NAKANO YOSHINORI; SUZUKI YOSHIO; TAKAHEI KENICHIROU; NAGAI HARUO |
| 发表日期 | 1983-05-21 |
| 专利号 | JP1983085587A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High output semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a preferable high output semiconductor laser element which can prevent current leakage by increasing the growing thickness of a p type crystalline layer for narrowing a current larger than the same degree as the diffusing distance of free electrons implanted to the layer. CONSTITUTION:Layers 11, 12, 13 are sequentially formed as crystalline layers on a substrate crystalline layer 16, a stripe thin film of suitable width is formed, both sides except the lower part of the thin film are removed by chemical etching, and crystalline layers of buried layers 14, 15 to become current narrowing p-n junction are sequentially formed. At this time to prevent current leakage through the buried layer, the thickness of a P type InP crystalline layer 14 is grown in the same degree or larger than the diffusing distance of free electrons, is controlled in thickness to cover the lateral side of GaInAsP 4-element mixed crystal 12, thereby forming an ohmic electrodes 17, 18 and coupling signal oscillator 19. |
| 公开日期 | 1983-05-21 |
| 申请日期 | 1981-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,NAKANO YOSHINORI,SUZUKI YOSHIO,et al. High output semiconductor laser element. JP1983085587A. 1983-05-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。