Controlling method for light of semiconductor laser
文献类型：专利
| 作者 | KAWAGUCHI HITOSHI |
| 发表日期 | 1983-08-18 |
| 专利号 | JP1983139485A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Controlling method for light of semiconductor laser |
| 英文摘要 | PURPOSE:To enable to control the light output intensity of a semiconductor laser at a high speed by optically coupling the laser light having a polarized wave plane different at 90 deg. form the polarized surface of the oscillation light of the laser and wavelength within the gain wavelength range of the laser to an active layer forming the laser. CONSTITUTION:A DC power source 11 which supplies a current for exciting a semiconductor laser is provided at the laser 10 of double hetero structure having an active layer 12, and a TE polarized wave having an electric field component is oscillated while in parallel with the hetero junction boundary. In this structure, the light of polarized wave different at 90 deg. from the wavelength within gain wavelength of the laser is optically coupled to the laser 10 from the direction of the resonator to guide the light in the layer 12. In this manner, if the incident light becomes a value larger than the prescribed value, the oscillation of TE wave can be stopped, and the oscillation of TM wave can be started. Accordingly, full excitation carrier in the laser 10 can be all contributed to the switching, thereby enabling to efficiently control the light. |
| 公开日期 | 1983-08-18 |
| 申请日期 | 1982-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI HITOSHI. Controlling method for light of semiconductor laser. JP1983139485A. 1983-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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