Growth method for semiconductor crystal
文献类型：专利
| 作者 | OOTA KAZUNARI; YOSHIKAWA AKIO; SUGINO TAKASHI; KAZUMURA MASARU |
| 发表日期 | 1983-10-15 |
| 专利号 | JP1983175825A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Growth method for semiconductor crystal |
| 英文摘要 | PURPOSE:To form the surface of a growth layer in a specular surface with excellent reproducibility by preventing the simultaneous contact of a dummy crystalline board with all melts during the growth of a semiconductor layer. CONSTITUTION:GaAs of a single crystal is used as a substrate 1, a crystalline board 5 and the dummy crystalline board 6, and length in the direction of the sliding of a boat is each made 20mm., 20mm. and 3mm.. The melts of liquid-phase components corresponding to each solid phase of Ga0.7Al0.3As, Ga0.9Al0.1As, Ga0.7Al0.3As and GaAs are entered previously into solution tanks 2 in order from a first layer. The melts are partitioned by the carbon of 5mm. width. A temperature is elevated up to 800 deg.C, held for 2hr and cooled slowly at the rate of 1 deg.C/min, and supersaturation at 5 deg.C is given first. The melt for the first layer is slid onto the crystalline board 5 and stopped for removing supersaturation in the crystal growtn of a first layer. The boat is further slid. The fouling of the surfaces of the melts is removed completely in a boundary between the dummy crystalline board 6 and the substrate |
| 公开日期 | 1983-10-15 |
| 申请日期 | 1982-04-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62854]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOTA KAZUNARI,YOSHIKAWA AKIO,SUGINO TAKASHI,et al. Growth method for semiconductor crystal. JP1983175825A. 1983-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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