Noise reducing method of semiconductor laser light
文献类型：专利
| 作者 | SUGIYAMA TOSHIO; SUENAGA HIDEO |
| 发表日期 | 1983-11-02 |
| 专利号 | JP1983188342A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Noise reducing method of semiconductor laser light |
| 英文摘要 | PURPOSE:To decrease the generation of optical noise of a semiconductor laser, by feeding back the light amount corresponding to 1-10% of all the irradiated light amount per one end surface from thes semiconductor laser to a semiconductor laser emitting spot. CONSTITUTION:The laser light irradiated from a spot 8 of a semiconductor laser 1 is made parallel by a coupling lens 2, and stopped to an optical spot 9 on a reflecting plane 6 on a disc by an aperture lens 5 after passing through a polarized prism 3 and a 1/4 wavelength plate 4. The reflected light from the reflecting plane passes through the lens 5 and the plate 4 again, is moved aside by the prism 3, reaches a photodetector 7 and is converted into an electric signal. In this signal, and prescribed feedback light amount is obtained by shifting an angle theta between the polarized plane of the laser light incident to the plate 4 and the crystal axis of the plate 4 from a normal value of 45 deg.. |
| 公开日期 | 1983-11-02 |
| 申请日期 | 1982-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62856]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SUGIYAMA TOSHIO,SUENAGA HIDEO. Noise reducing method of semiconductor laser light. JP1983188342A. 1983-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。