Ohmic electrode forming method in compound semiconductor
文献类型：专利
| 作者 | MORI MITSUHIRO; MORI TAKAO; HIRAO MOTONAO; SAITOU KATSUTOSHI; IMAI KUNINORI; CHIBA KATSUAKI; KATOU HIROSHI; KOBAYASHI MASAMICHI |
| 发表日期 | 1984-06-21 |
| 专利号 | JP1984107510A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Ohmic electrode forming method in compound semiconductor |
| 英文摘要 | PURPOSE:To provide ohmic electrode with small contact resistance and high reproductivity, by a method wherein on a compound semiconductor crystal with P as main constituent element is formed a high-melting metal layer at a low temperature, and Au layer is formed on the uppermost layer, and then the heat treatment is performed at such temperature and time that the Au layer and the semiconductor crystal do not react to produce alloy. CONSTITUTION:In order to form electrodes in alignment with buried layers 202, 203 and a cap layer 207, an insulation film layer 208 from SiO2 film is formed on a surface, and part of the insulation layer 208 is bored and then a first metal layer 209 is formed by means of vacuum evaporation. A second metal layer 210 of Mo, Pt or the like is formed thereon, and further a third metal layer 211 of Au is formed thereon. The second metal layer 210 is interposed between the first metal layer 209 and the third metal layer 211 of Au used to facilitate the bonding and serves to prevent reaction during the heat treatment. In this constitution, ohmic electrode with good reproductivity and small contact resistance is obtained. |
| 公开日期 | 1984-06-21 |
| 申请日期 | 1982-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62869]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | MORI MITSUHIRO,MORI TAKAO,HIRAO MOTONAO,et al. Ohmic electrode forming method in compound semiconductor. JP1984107510A. 1984-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。