Formation of protection film for semiconductor laser device end surface
文献类型：专利
| 作者 | TAMURA HIDEO; IIDA SEIJI; YAMAMOTO KATSUYOSHI; KURIHARA HARUKI |
| 发表日期 | 1984-06-26 |
| 专利号 | JP1984110185A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of protection film for semiconductor laser device end surface |
| 英文摘要 | PURPOSE:To form protection films with less stress at the same time at both end surfaces by arranging the end surfaces of a semiconductor device at the positions vertical to a sputtered target. CONSTITUTION:The protection films with less stress are formed at the same time at both the end surfaces by the creeping-in of the formed film by arranging both end surfaces 19 of the semiconductor laser device with a metallic mask 21 placed in the surface on a sample stage at the positions vertical to the sputtered target 17. Since the surface 20 of the device 13 parallel to the sputtered target 17 is a surface whereto wire bonding is performed, a width which can be bonded is covered with the metallic mask 21 in order to prevent the insulation by the film adhesion. |
| 公开日期 | 1984-06-26 |
| 申请日期 | 1982-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,IIDA SEIJI,YAMAMOTO KATSUYOSHI,et al. Formation of protection film for semiconductor laser device end surface. JP1984110185A. 1984-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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