中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of protection film for semiconductor laser device end surface

文献类型:专利

作者TAMURA HIDEO; IIDA SEIJI; YAMAMOTO KATSUYOSHI; KURIHARA HARUKI
发表日期1984-06-26
专利号JP1984110185A
著作权人TOKYO SHIBAURA ELECTRIC CO
国家日本
文献子类发明申请
其他题名Formation of protection film for semiconductor laser device end surface
英文摘要PURPOSE:To form protection films with less stress at the same time at both end surfaces by arranging the end surfaces of a semiconductor device at the positions vertical to a sputtered target. CONSTITUTION:The protection films with less stress are formed at the same time at both the end surfaces by the creeping-in of the formed film by arranging both end surfaces 19 of the semiconductor laser device with a metallic mask 21 placed in the surface on a sample stage at the positions vertical to the sputtered target 17. Since the surface 20 of the device 13 parallel to the sputtered target 17 is a surface whereto wire bonding is performed, a width which can be bonded is covered with the metallic mask 21 in order to prevent the insulation by the film adhesion.
公开日期1984-06-26
申请日期1982-12-16
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/62871]  
专题半导体激光器专利数据库
作者单位TOKYO SHIBAURA ELECTRIC CO
推荐引用方式
GB/T 7714
TAMURA HIDEO,IIDA SEIJI,YAMAMOTO KATSUYOSHI,et al. Formation of protection film for semiconductor laser device end surface. JP1984110185A. 1984-06-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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