Formation of protection film for semiconductor laser device end surface
文献类型:专利
作者 | TAMURA HIDEO; IIDA SEIJI; YAMAMOTO KATSUYOSHI; KURIHARA HARUKI |
发表日期 | 1984-06-26 |
专利号 | JP1984110185A |
著作权人 | TOKYO SHIBAURA ELECTRIC CO |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Formation of protection film for semiconductor laser device end surface |
英文摘要 | PURPOSE:To form protection films with less stress at the same time at both end surfaces by arranging the end surfaces of a semiconductor device at the positions vertical to a sputtered target. CONSTITUTION:The protection films with less stress are formed at the same time at both the end surfaces by the creeping-in of the formed film by arranging both end surfaces 19 of the semiconductor laser device with a metallic mask 21 placed in the surface on a sample stage at the positions vertical to the sputtered target 17. Since the surface 20 of the device 13 parallel to the sputtered target 17 is a surface whereto wire bonding is performed, a width which can be bonded is covered with the metallic mask 21 in order to prevent the insulation by the film adhesion. |
公开日期 | 1984-06-26 |
申请日期 | 1982-12-16 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/62871] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOKYO SHIBAURA ELECTRIC CO |
推荐引用方式 GB/T 7714 | TAMURA HIDEO,IIDA SEIJI,YAMAMOTO KATSUYOSHI,et al. Formation of protection film for semiconductor laser device end surface. JP1984110185A. 1984-06-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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