Formation of protection film for end surface of semiconductor laser element
文献类型：专利
| 作者 | IIDA SEIJI |
| 发表日期 | 1985-03-07 |
| 专利号 | JP1985042888A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of protection film for end surface of semiconductor laser element |
| 英文摘要 | PURPOSE:To contrive to improve the productivity by a method wherein the P-N electrode parts of a plurality of stripe-form semiconductor laser element arrays are held by an elastic resin, and then dielectric protection films are formed at the light emitting end surfaces thereof. CONSTITUTION:A plurality of cuts 10 are formed over the elastic resin 9 of plate form. The stripe-form semiconductor laser element arrays 11 with a plurality of semiconductor elements connected in the transverse direction are arranged in such cuts 10, respectively, by insertion. Thus, both the P-N electrode parts of the array 11 are held by the elastic resin 9. The resin 9 is fixed in a fixed jig 13. Thereafter, the protection films made of dielectric are adhesion-formed at the light emitting end surfaces 12 of the array 11 with a film thickness corresponding to 1/2 of the oscillation wavelength of the semiconductor element. This method enables the reduction of two processes of the adhesion of electrode posts and the wire bonding to the elements and the electrode posts, and then the improvement of the productivity, such as the remarkable reduction of the time for element rearrangement. |
| 公开日期 | 1985-03-07 |
| 申请日期 | 1983-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | IIDA SEIJI. Formation of protection film for end surface of semiconductor laser element. JP1985042888A. 1985-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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