Semiconductor laser device of high output single mode
文献类型：专利
| 作者 | YOSHIKUNI YUUZOU; IKEGAMI TETSUHIKO |
| 发表日期 | 1985-03-07 |
| 专利号 | JP1985042887A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device of high output single mode |
| 英文摘要 | PURPOSE:To enable to obtain a coherent and high output oscillated light by a method wherein at least one of the integrated lasers is made as a single vertical mode laser, and at the same time the phase of each laser is synchronized with each other. CONSTITUTION:An optical guide layer 2 is formed on a semiconductor substrate 1 with a diffraction lattice 3 formed, and active layers 4, 6, etc. constituting a plurality of buried lasers, buried layers 5, etc. are alternately arranged. Each laser oscillates at single vertical mode by the action of the lattice 3. Each laser is coupled by means of the common layer 2, being uniformed in the phase owing to the interaction of photo injection, and performing coherent oscillation. It is sufficient that the lattice 3 is formed in one or more of a plurality of lasers; besides, that it is also of the structure of distributed reflection formed only before the laser resonator or thereafter. As above-mentioned, this construction enables to enlarge the effective width of an active layer, and then to obtain the high photo output. |
| 公开日期 | 1985-03-07 |
| 申请日期 | 1983-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62893]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | YOSHIKUNI YUUZOU,IKEGAMI TETSUHIKO. Semiconductor laser device of high output single mode. JP1985042887A. 1985-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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