Electrode structure of semiconductor laser element
文献类型：专利
| 作者 | OOTSUKA NAOTAKA; UEDA SADAAKI; TERAOKA YOSHICHIKA |
| 发表日期 | 1985-04-10 |
| 专利号 | JP1985062182A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrode structure of semiconductor laser element |
| 英文摘要 | PURPOSE:To increase the diebonding precision automatically in case of fixing electrodes on a heat sink by a method wherein locating patterns are formed on electrodes of semiconductor laser elements. CONSTITUTION:When electrodes 1 of semiconductor laser elements are provided on the upper and lower side of the element body in terms of the structure of the electrodes, two stripes 2 and 2' for pattern identification are formed on the surface of the electrodes. An this time, the width of stripes and the interval thereof are respectively specified to be 1-10mum and 50-250mum. In such a structure wherein the electrodes 1 of the laser elements are provided with two parallel stripes 2 and 2', a pattern may be identified by an optical means to be utilized as an useful locating data in die-bonding process. Resultantly the laser elements may be assembled automatically and easily. |
| 公开日期 | 1985-04-10 |
| 申请日期 | 1983-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62898]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | OOTSUKA NAOTAKA,UEDA SADAAKI,TERAOKA YOSHICHIKA. Electrode structure of semiconductor laser element. JP1985062182A. 1985-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。