Fluxless bonding of microelectronic chips
文献类型:专利
作者 | HENEIN, GERARD EDMOND; HEPPLEWHITE, RALPH THOMAS; SCHWARTZ, BERTRAM |
发表日期 | 1984-04-25 |
专利号 | EP0106598A2 |
著作权人 | WESTERN ELECTRIC COMPANY, INCORPORATED |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | Fluxless bonding of microelectronic chips |
英文摘要 | Indium is used to bond semiconductor lasers to their heat-sinks without the presence of a corrosive liquid flux. Fluxless bonding is achieved in a vacuum chamber (18) in reducing ambients of CO or H2. Low strain bonds are achieved at bonding temperatures of approximately 180-240°C in CO and 220-230°C in H2. Void-free bonds are achieved in CO at temperatures as low as about 205°C. The technique is applicable to other microelectronic chips such as LEDs, for example. |
公开日期 | 1984-04-25 |
申请日期 | 1983-09-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/62899] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | WESTERN ELECTRIC COMPANY, INCORPORATED |
推荐引用方式 GB/T 7714 | HENEIN, GERARD EDMOND,HEPPLEWHITE, RALPH THOMAS,SCHWARTZ, BERTRAM. Fluxless bonding of microelectronic chips. EP0106598A2. 1984-04-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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