Device for liquid phase growth
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; HIRAO MOTONAO; KAYANE NAOKI; TSUJI SHINJI; OOISHI AKIO |
| 发表日期 | 1985-05-18 |
| 专利号 | JP1985088427A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Device for liquid phase growth |
| 英文摘要 | PURPOSE:To obtain a relatively simple device capable of prevention of thermal modification of the surface of an InP substrate by arranging a phosphorus- added solution right above the InP substrate through a jig comprising narrow holes. CONSTITUTION:Using the sliding-type boat which is composed of a jig 23 made of graphite comprising liquid reservoirs 17-22 and a slider 11 made of graphite comprising a cavity 24 for arranging an INP substrate, an InP substrate 8 (or 27) is arranged in the predetermined position 24. Then, above the position 24, an InP substrate thermal modification preventing solution 10 (or 25) prepared in advance by cooling an In solution in which phosphorus is saturated with 740 deg.C is arranged in the liquid reservoir 22 through a graphite jig 9 (or 26) provided with a plurality of small holes for holding the phosphorus-added solution. Under this condition, the whole body of the sliding-type boat is inserted in a crystal tube reactor and after the inside of the reactor is substituted by H2, a temperature of the InP substrate is increased to 650 deg.C in H2 gas flow and is cooled after keeping that temperature for 1hr. |
| 公开日期 | 1985-05-18 |
| 申请日期 | 1983-10-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62902]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,HIRAO MOTONAO,KAYANE NAOKI,et al. Device for liquid phase growth. JP1985088427A. 1985-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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