Manufacture of integrated semiconductor device
文献类型：专利
| 作者 | FURUYAMA HIDETO; UNNO YOUICHI |
| 发表日期 | 1985-09-09 |
| 专利号 | JP1985175476A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of integrated semiconductor device |
| 英文摘要 | PURPOSE:To enhance the arraying accuracy and improve the heat sink of a semiconductor element by bonding a plurality of metal pieces through insulating pieces in a sandwich shape, and then mounting fixedly the element through a solder material. CONSTITUTION:A heat sink body 1 and an insulator 2 are selected to have an equal arraying interval of semiconductor elements in the total of the thicknesses and the solder material. The body 1 and the insulator 2 are bonded with hard brazing material. Then, the solder material is selectively deposited and plated on the body Then, an electric isolation is formed between the elements to form a semiconductor array, which is mounted fixedly on the position of the heat sink body. Thus, the element array is mounted up-side-down. The elements are electrically connected through each of the heat sink body. |
| 公开日期 | 1985-09-09 |
| 申请日期 | 1984-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,UNNO YOUICHI. Manufacture of integrated semiconductor device. JP1985175476A. 1985-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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