Optical information memory circuit
文献类型：专利
| 作者 | NAGASHIMA KUNIO |
| 发表日期 | 1985-11-14 |
| 专利号 | JP1985229387A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical information memory circuit |
| 英文摘要 | PURPOSE:To eliminate the need for temperature control by a Peltier element, etc., and to stabilize the memory of optical informations by controlling currents fed to an electrode on the loss region side of a bistable semiconductor laser on the basis of the temperature of an active layer. CONSTITUTION:A transistor 201 is fitted adjoined to a laser 200 so as to be kept at the same temperature as the bistable semiconductor laser 200. When the current value IC of a constant current circuit 202 is kept constant, the temperature T of an active layer in the bistable semiconductor laser 200 can be detected by the base-emitter voltage VBE of the transistor 20 A voltage detecting circuit 203 controls the current value i2 of a variable current circuit 207 in response to the base-emitter voltage VBE of the transistor 201, and reduces the current value i2 of the variable current circuit 207 in response to the rise of the base-emitter voltage VBE of the transistor 201 when base-emitter voltage VBE rises. The input/output characteristics of the voltage detecting circuit 203 are determined so that the temperature change of the i1-Pout characteristics of the bistable semiconductor laser and a current value offsetting the change of said characteristics by i2 are generated in the variable constant-current circuit 207. |
| 公开日期 | 1985-11-14 |
| 申请日期 | 1984-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | NAGASHIMA KUNIO. Optical information memory circuit. JP1985229387A. 1985-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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