Electro-optic conversion element
文献类型：专利
| 作者 | WATANABE HIDEAKI; FUJIMOTO AKIRA |
| 发表日期 | 1986-05-12 |
| 专利号 | JP1986093691A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Electro-optic conversion element |
| 英文摘要 | PURPOSE:To improve the effect of heat dissipation by forming a recessed section for dissipating heat to the outer surface of a semiconductor substrate. CONSTITUTION:A confinement layer 2, an active layer,a confinement layer, a cap layer, an insulating film and a positive-pole side electrode are formed onto the lower surface of a substrate 1 while a positive-pole side electrode 7 is shaped onto the upper surface of the substrate 1, thus manufacturing a laser-wafer 20. SiO2 masks 11 are formed onto the laser-wafer 20 to a striped shape at regular intervals in the direction of cleavage, a negative-pole side electrode 8 is etched by using an etching liquid in which hydrochloric acid, acetic acid ad hydrogen peroxide are mixed at the ratio of 1:2:1, and the substrate 1 is etched by employing a diluted solution consisting of ammonium hydroxide to shape grooves 10 until they reach the confinement layer 2. The SiO2 masks 11 are removed, and the laser-wafer 20 is cloven and diced. The grooves are formed from the upper surface of the negative-pole side electrode in the semiconductor laser-diode, thus increasing the surface area of the substrate, then improving heat dissipating properties from the surface of the substrate. |
| 公开日期 | 1986-05-12 |
| 申请日期 | 1984-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62948]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | WATANABE HIDEAKI,FUJIMOTO AKIRA. Electro-optic conversion element. JP1986093691A. 1986-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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