Method for forming electrode of semiconductor element
文献类型：专利
| 作者 | YAMAGUCHI MASAYUKI; UEHARA KUNIO; NOGUCHI HIDEAKI |
| 发表日期 | 1986-05-26 |
| 专利号 | JP1986108166A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for forming electrode of semiconductor element |
| 英文摘要 | PURPOSE:To obtain an electrode, which is rigidly bonded to a package and the like, by attaching a lower electrode for ohmic connection in a single-layer or multilayer structure to the surface of a semiconductor element substrate, performing heat treatment, and providing an upper electrode, whose topmost layer has a single-layer or multilayer structure of Au. CONSTITUTION:On the P-side surface of a semiconductor laser 1, Cr 4 and Au 5 are evaporated as a lower electrode in this order. Then heat treatment is performed in an N2 atmosphere at 360 deg.C for about 30min. Ti 6 and Au 7 are sequentially sputtered as an upper electrode 3. The thickness of the layers are as follows: 500Angstrom for Cr, 1,000Angstrom for Au, 1,000Angstrom for Ti and 5,000Angstrom for Au. In this constitution, the upper-layer electrode is attached after the heat treatment of the lower-layer electrodes in fusing of AuSn to a heat sink, and no deposition occurs from the lower electrode to the upper electrode. Excellent alloy reaction occurs and regid bonding is accomplished. |
| 公开日期 | 1986-05-26 |
| 申请日期 | 1984-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62951]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI MASAYUKI,UEHARA KUNIO,NOGUCHI HIDEAKI. Method for forming electrode of semiconductor element. JP1986108166A. 1986-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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