Bonding method for semiconductor laser
文献类型：专利
| 作者 | MURATA KAZUHISA |
| 发表日期 | 1986-06-09 |
| 专利号 | JP1986121383A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bonding method for semiconductor laser |
| 英文摘要 | PURPOSE:To shorten the time, and to improve accuracy by die-bonding a semiconductor laser chip by spot beams. CONSTITUTION:AuSn 2 is evaporated to the upper section of a trapezoid 1 formed by etching Si to a mesa shape, and a semiconductor laser chip 3 is positioned at an end surface. Only the periphery of the semi-conductor laser chip 3 is heated by infrared spot beams 4, AuSn is melted, and Si is die-bonded with the laser chip. An Si sub-mount material is moved in the direction of the arrow, and the laser chips 4 are die-bonded similarly in succession. Accordingly, the bonding time can be shortened while a jig does not e-xpand by thermal expansion because the whole jig need not be heated, thus improving accuracy. |
| 公开日期 | 1986-06-09 |
| 申请日期 | 1984-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62952]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MURATA KAZUHISA. Bonding method for semiconductor laser. JP1986121383A. 1986-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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