Bipolar transistor
文献类型：专利
| 作者 | ARAI MICHIHIKO |
| 发表日期 | 1986-06-19 |
| 专利号 | JP1986131491A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bipolar transistor |
| 英文摘要 | PURPOSE:To much effectively perform a light coupling as compared with the conventional one by forming a structure that the compositions of the second collector region of a collector layer and a base layer are altered to form the energy gap of the second collector region smaller than that of the base layer. CONSTITUTION:A collector layer 2 is formed of collector regions 2a, 2b, and the composition of a crystal is set to become the relationships of Eg4>Eg3Ebg2 in the magnitude relationship between the energy gaps Eg2 and Eg4 among collector layer 2(2a, 2b), a base layer 3 and an emitter layer 4. In case of Eg4>Eg3, the improvements in the current injection efficiency by wide gap emitter and light input/output efficiency of upper emitter layer 4 side are performed. Eg3Eg3Eg2 is satisfied, there is high sensitivity photoreceiving wavelength band from the wavelength of emitting light to longer wavelength for the external incident light. |
| 公开日期 | 1986-06-19 |
| 申请日期 | 1984-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62953]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ARAI MICHIHIKO. Bipolar transistor. JP1986131491A. 1986-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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