Compound semiconductor device and manufacture thereof
文献类型：专利
| 作者 | KANO HIROYUKI; HASHIMOTO MASAFUMI |
| 发表日期 | 1986-07-16 |
| 专利号 | JP1986156727A |
| 著作权人 | TOYOTA CENTRAL RES & DEV LAB INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a high-performance diode or laser by implanting Ge as well as Te into a AlGaAs layer to overcome the saturation phenomenon of conduction electron concentration, thereby providing a high-concentration N-type AlGaAs layer. CONSTITUTION:A Ga solution is prepared in which GaAs, Al, Zn, Te and Ge are compounded in predeterined preparation amounts. This solution is placed in a solution reservoir along with but separately of a P-type GaAs substrate 2, and heated to 800 deg.C to prepare Ga solutions A-C for semiconductor layers 3-5. These are slowly cooled at a rate of 0.3 deg.C/min. At 794 deg.C, the solution A is contacted with the substrate 2 to make Zn-added P-type Al0.3Ga0.7As3, which in turn is contacted with the solution B by quickly moving the boat to make Te-added, P-type Al0.3Ga0.7As4. then, this is quickly contacted with the solution C to make N-type Al0.3Ga0.7As5 to which Te and Ge were mixedly added. The solution C is removed, and electrodes 6a, 6b are added on the layer 5 and the substrate 2. Since the layer 5 with mixedly added Te, Ge has a forbidden band which is wider than those of the layers 3, 4 with singly added Zn or Te, and it is difficult to absorb light, it is suitable for an LED window. Conduction electron concentration increases more remarkably than single addition of Te, and ohmic loss substantially decreases. |
| 公开日期 | 1986-07-16 |
| 申请日期 | 1984-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62959]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYOTA CENTRAL RES & DEV LAB INC |
| 推荐引用方式 GB/T 7714 | KANO HIROYUKI,HASHIMOTO MASAFUMI. Compound semiconductor device and manufacture thereof. JP1986156727A. 1986-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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