Liquid phase growth method of compound semiconductor
文献类型：专利
| 作者 | KANO HIROYUKI; HASHIMOTO MASAFUMI |
| 发表日期 | 1986-07-19 |
| 专利号 | JP1986159725A |
| 著作权人 | TOYODA CHUO KENKYUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase growth method of compound semiconductor |
| 英文摘要 | PURPOSE:To form a P-N junction in accordance with a design by using a Ga solution containing Ge as an impurity and comprising Al and As and growing an N-type AlGaAs layer having a specific composition onto a P-type AlGaAs layer having a specific composition in the liquid phase. CONSTITUTION:A Ga solution containing Ge as an impurity and comprising Al and As is employed, and a P-type AlxGa1-xAs (0<=x<1) layer is grown onto an N-type AlyGa1-yAs (0<=y<1) layer in the liquid phase. To be concrete, a GaAs substrate 35 and Ga, GaAs, Al and Ge are introduced to a boat 30 consisting of a cover 31, a slider 32 and a holder 33, a temperature is elevated up to 830 deg.C in H2 gas to manufacture the Ga solution 34, and the temperature is lowered up to 800 deg.C to manufacture a saturated Ga solution. When slow cooling is started, the slider 32 is operated when the temperature lowers by several deg.C and the solution 34 is brought into contact onto the substrate 35, a supersaturated AlyGa1-yAs (y=0.7) layer 36 is grown on the substrate 35. The Ga solution is removed, the boat is cooled, and the substrate 35 is extracted. The crystal takes an N-type. |
| 公开日期 | 1986-07-19 |
| 申请日期 | 1984-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62960]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA CHUO KENKYUSHO KK |
| 推荐引用方式 GB/T 7714 | KANO HIROYUKI,HASHIMOTO MASAFUMI. Liquid phase growth method of compound semiconductor. JP1986159725A. 1986-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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