Manufacture of striped type semiconductor laser
文献类型：专利
| 作者 | NOMURA TAKASHI; ITO TATSUYA; KATSUTA HIROHIKO |
| 发表日期 | 1986-08-20 |
| 专利号 | JP1986187288A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of striped type semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the generation of an air gap in a striped section and the generation of leakage due to the adhesion of a metal for joining by exposing a peripheral section on a metallic electrode layer, selectively forming an Au electrode layer and interposing and joining thin-film-shaped Sn between a heat sink and the Au electrode layer. CONSTITUTION:An electric insulating layer 7 laminated on a laser wafer 14 is etched to a striped shape in predetermined width and the surface of the laser wafer 14 is exposed to shape stripes 8, and an ohmic electrode layer 9 with recessed sections 15 is formed. A metallic layer 16 consisting of a thick-film for bonding is laminated on the electrode layer 9, cleaving sections X, Y surrounding the prescribed length sections of the stripes 8 are exposed, a large number of rectangular independent layers are shaped while the recessed sections 15 are buried densely and the surface is flattened, and the laser wafer 14 is cloven and cut off, thus manufacturing chips The chips are mounted onto a heat sink 11 through the metallic layer 16 and a thin- film composed of tin through thermo-compression bonding. Accordingly, an adhesion onto the end surface of the semiconductor laser 1 of a metal for joining can be prevented, and the formation of air gaps between the heat sink 11 and the semiconductor laser 1 is obviated, thus eliminating the lowering of the efficiency of removal of heat. |
| 公开日期 | 1986-08-20 |
| 申请日期 | 1985-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | NOMURA TAKASHI,ITO TATSUYA,KATSUTA HIROHIKO. Manufacture of striped type semiconductor laser. JP1986187288A. 1986-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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