Waveform sweeping semiconductor laser device
文献类型：专利
| 作者 | SHIBAGAKI TARO; IBE HIROYUKI; KONNO KUNIAKI |
| 发表日期 | 1986-11-10 |
| 专利号 | JP1986252681A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Waveform sweeping semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to sweep the oscillating wavelength of a semiconductor laser with good response, by arranging a minute heater, which heats the laser, in close proximity to the laser. CONSTITUTION:A substrate 11 of a semiconductor laser 10 is closely contacted and fixed on a minute heater 20 through a conducting layer 41 comprising Ti-Pt-Au. A part of the conducting layer 41 is connected to a diffused layer 22 through an opening 24 in an insulating film 23. A conducting layer 42 is formed in another opening 25 in the insulating film 23. The minute heater 20 is mounted on a heat sink 30 by way of a conducting layer 43 comprising Ti-Pt- Au and an SiO2 film 44. Thus the semiconductor laser 10 can be quickly heated by conducting and heating the minute heater 20. Therefore, the oscillating wavelength of the semiconductor laser 10 can be varied with good response. |
| 公开日期 | 1986-11-10 |
| 申请日期 | 1985-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62983]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SHIBAGAKI TARO,IBE HIROYUKI,KONNO KUNIAKI. Waveform sweeping semiconductor laser device. JP1986252681A. 1986-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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