Semiconductor laser and drive thereof
文献类型：专利
| 作者 | ONO YUZO |
| 发表日期 | 1986-11-25 |
| 专利号 | JP1986265886A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and drive thereof |
| 英文摘要 | PURPOSE:To stabilize the oscillation wavelength of a semiconductor laser without necessiating a particular outdoor temperature control unit even when a temperature change occurs in the outdoor environment by a method wherein another conducting electrode, which leads out the junction voltage of the junction part, is provided adjacent to the light-emitting part independent of the conducting electrode, which feeds driving current to the light-emitting part. CONSTITUTION:Two diodes: the diode of a light-emitting part 12 and the diode of a detecting part 13, are constituted on one chip. A terminal 4 is the driving terminal for the diode 12 of the light-emitting part and makes the diode 12 of the light-emitting part drive through a pulse-modulating circuit 15 and an offset and bias control circuit 16. Low current of several mA or thereabouts is always being passed to the detecting part 13 through a detecting circuit 17. The detecting part terminal voltage is compared with the reference voltage in the detecting circuit 17 and in case the detecting part terminal voltage is higher than the reference voltage (equivalent to the time when the temperature of the detecting part is lower than the reference temperature), the offset current and bias current of the light-emitting part 12 are increased through the offset and bias control circuit 16 so that the detecting part terminal voltage drops to the reference voltage. |
| 公开日期 | 1986-11-25 |
| 申请日期 | 1985-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ONO YUZO. Semiconductor laser and drive thereof. JP1986265886A. 1986-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。