Semiconductor laser device and its driving method
文献类型：专利
| 作者 | MATSUEDA HIDEAKI |
| 发表日期 | 1987-05-08 |
| 专利号 | JP1987098685A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its driving method |
| 英文摘要 | PURPOSE:To form a semiconductor laser device having an operation speed higher than several Gbit/s, by forming a plurality of excitation region arranged in the state where mutual optical coupling can occur and driven independently, with a main emission region and the other auxiliary emission region for modulation. CONSTITUTION:A large driving current is applied to an excitation region (A region) to induce an intense emission. The driving current nearly equal to the threshold value is applied to the other neighboring excitation region (B region) to induce an weak emission, and the super mode is formed. When this state of the driving current is inverted, the emission intensity also is inverted, and the high intensity emission region transfers to the B region. The transition speed is as high as about 10sec. That is, the emission output of A region decreases rapidly, although the carrier density of A region does not decrease rapidly when the current flowing in the A region is decreased rapidly. By making use of this, the semiconductor laser device capable of high speed modulation such as 1,000Gbit/s can be obtained. |
| 公开日期 | 1987-05-08 |
| 申请日期 | 1985-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63003]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI. Semiconductor laser device and its driving method. JP1987098685A. 1987-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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