中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device and its driving method

文献类型:专利

作者MATSUEDA HIDEAKI
发表日期1987-05-08
专利号JP1987098685A
著作权人HITACHI LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser device and its driving method
英文摘要PURPOSE:To form a semiconductor laser device having an operation speed higher than several Gbit/s, by forming a plurality of excitation region arranged in the state where mutual optical coupling can occur and driven independently, with a main emission region and the other auxiliary emission region for modulation. CONSTITUTION:A large driving current is applied to an excitation region (A region) to induce an intense emission. The driving current nearly equal to the threshold value is applied to the other neighboring excitation region (B region) to induce an weak emission, and the super mode is formed. When this state of the driving current is inverted, the emission intensity also is inverted, and the high intensity emission region transfers to the B region. The transition speed is as high as about 10sec. That is, the emission output of A region decreases rapidly, although the carrier density of A region does not decrease rapidly when the current flowing in the A region is decreased rapidly. By making use of this, the semiconductor laser device capable of high speed modulation such as 1,000Gbit/s can be obtained.
公开日期1987-05-08
申请日期1985-10-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/63003]  
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
MATSUEDA HIDEAKI. Semiconductor laser device and its driving method. JP1987098685A. 1987-05-08.

入库方式: OAI收割

来源:西安光学精密机械研究所

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