Buried hetero structure semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1987-11-11 |
| 专利号 | JP1987259490A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried hetero structure semiconductor laser |
| 英文摘要 | PURPOSE:To improve high frequency characteristic by providing a couple of parallel grooves in such a depth as reaching the active layer in the both sides of active layer in the mesa stripe region and moreover forming a striped current injection region insulating the surface of surface layer with only the region located at the upper surface of mesa stripe uninsulated in the form of striped region. CONSTITUTION:A couple of parallel grooves 30, 31 are formed to a semiconductor wafer in parallel to the direction by the etching deeper than a InGaAsP active layer 3 and thereby a mesa stripe 10 including the active layer for light emitting recoupling can be formed. Thereafter, the P type InP current block layer 5, N type InP block layer 6 are stacked except for only the upper surface of mesa stripe by the buried growth method. Moreover, the P type InP buried layer 7, P type InGaAsP electrode layer 8 are formed on the entire part by the growth method. Thereby, the buried hetero structure semiconductor laser having improved high frequency characteristic can be obtained. |
| 公开日期 | 1987-11-11 |
| 申请日期 | 1986-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. Buried hetero structure semiconductor laser. JP1987259490A. 1987-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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