Cleavage of semiconductor substrate
文献类型：专利
| 作者 | ISHIGURO NAGATAKA; FURUIKE SUSUMU |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296579A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Cleavage of semiconductor substrate |
| 英文摘要 | PURPOSE:To form an excellent cleavage plane extremely easily with superior reproducibility by forming an edge flaw at the position of cleavage of the periph eral section of a semiconductor substrate, bonding the semiconductor substrate with a sheet having excellent stretching properties and stretching the sheet. CONSTITUTION:A substrate 1 is fixed onto a stage precisely moved by a stepping motor, etc., and the intervals of edge flaws 6 by a diamond cutter can be conformed to a target value set approximately without errors. The substrate 1 is stuck to a vinyl chloride group sheet 2 by pressure sensitive adhesives 3, the upper section of the substrate 1 is pressed down by a polyester group sheet 4, tensile force is applied mechanically in the direction of the arrow, and the tensile direction is directed in the direction rectangular to the direction of cleavage. When the semiconductor substrate 1 is struck slowly, conformed to the edge flaws 6 by a vertically movable hammer 5 for striking under the state, the substrate 1 is cloven accurately at the positions of the edge flaws 6. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA,FURUIKE SUSUMU. Cleavage of semiconductor substrate. JP1987296579A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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