Measuring equipment for optical characteristic of semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI ATSUYUKI; ABE TOMOKO |
| 发表日期 | 1988-02-05 |
| 专利号 | JP1988028083A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Measuring equipment for optical characteristic of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate locating of a small kink by a method wherein same measurement is repeated at approximately uniform temperatures twice or more times when optical characteristics of a semiconductor laser are measured. CONSTITUTION:By utilizing the temperature dependency of a kink, the characteristics of a semiconductor laser (LD) are successively measured twice at the temperatures with very little difference from each other. Like conventional I-L measurement, a temperature controller 4 is set and the temperature of an LD 1 is maintained at a measuring temperature and the LD 1 is made to oscillate by current sweeping and a light output is received by a photodetector and inputted to the Y-coordinate of an X-Y recorder and the current is inputted to the X-coordinate of the X-Y recorder to obtain an I-L characteristic curve. Successively, a fine temperature changer 33 is operated to change the temperature of a fine temperature change part 32 only a little bit. The I-L characteristic curve obtained like this reflects the I-L characteristic of the LD and is a little thick. However, as the temperature dependency of the change of the kink producing current exceeds this variation, the curve becomes significantly thick or divided into two curves at the location of a kink. With this constitution, the location of a kink can be detected easily. |
| 公开日期 | 1988-02-05 |
| 申请日期 | 1986-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63036]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI ATSUYUKI,ABE TOMOKO. Measuring equipment for optical characteristic of semiconductor laser. JP1988028083A. 1988-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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