Method of screening semiconductor laser
文献类型：专利
| 作者 | ABE TOMOKO; KOBAYASHI ATSUYUKI |
| 发表日期 | 1988-02-05 |
| 专利号 | JP1988028084A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of screening semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate measuring the temperature dependency of a kink in a short time by measuring the differential characteristics of a constant output driving current differentiated by a temperature. CONSTITUTION:When semiconductor lasers are subjected to screening test, the existence of a kink is determined by measuring the differential characteristics dI/dT of a constant output driving current I differentiated by a temperature T. For instance, a current is applied to a semiconductor laser 1 from an APC driving circuit 6 so as to keep a light output constant. A pulsating heat flow generator 3, which produces a pulsating heat flow from a lamp by using a chopper, makes a lock-in amplifier 8 amplify the driving current as a reference signal and makes a recorder 9 record the reference signal with the signal from a temperature controller 4 to measure dI/dT characteristics. |
| 公开日期 | 1988-02-05 |
| 申请日期 | 1986-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ABE TOMOKO,KOBAYASHI ATSUYUKI. Method of screening semiconductor laser. JP1988028084A. 1988-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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