Manufacture of lens integral semiconductor laser
文献类型：专利
| 作者 | NAKAYAMA YOSHINOBU |
| 发表日期 | 1988-02-18 |
| 专利号 | JP1988038278A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of lens integral semiconductor laser |
| 英文摘要 | PURPOSE:To simply and inexpensively form a lens integral semiconductor laser by dropping a melted lens material on the emitting end face of the laser, and integrally solidifying with the laser of spherical state due to a surface tension to obtain a spherical lens. CONSTITUTION:A semiconductor laser 40 is made of a positive electrode 8, a cap layer 10, a clad 10, an active layer 14, a negative electrode 16, and a substrate 22. A nozzle 18 is positioned toward the center of the layer 14 above an emitting end face 40A, and a melted lens material 20 is dropped. The material 20 uses a mixture of optical glass or liquid organic material before polymerization, such as MMA (methylmethacrylate) and a polymerizable material. The material 20 dropped to the center of the layer 14 exhibits a spherical shape due to the surface tension thereof, is solidified by cooling, and integrated with the laser. Since an interval between a collimate lens and the emitting light of the laser must be separated normally 100mum-1mum or longer, a transparent film 50 of several 100 mum or thicker is formed on the emitting end face before the material is dropped. |
| 公开日期 | 1988-02-18 |
| 申请日期 | 1986-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAYAMA YOSHINOBU. Manufacture of lens integral semiconductor laser. JP1988038278A. 1988-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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