Package structure of photoelectronic component
文献类型：专利
| 作者 | HIRONISHI KAZUO; HORIMATSU TETSUO; SONETSUJI NOBORU; GOTO MASAMI; SUGATA AKIHIKO |
| 发表日期 | 1988-03-26 |
| 专利号 | JP1988067792A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Package structure of photoelectronic component |
| 英文摘要 | PURPOSE:To reduce the inductance of a connecting part and to improve a cooling effect of a photoelectronic component by a construction wherein the photoelectronic component is accommodated in a recessed part formed in the end of a substrate, so that the base and three side surfaces thereof contact closely with the wall surfaces of said part, and a strip-shaped conductor leaf is superposed thereon for bridging to connect the photoelectronic component and a chip component together. CONSTITUTION:After a photoelectronic component 1 is mounted in a recessed part 10, one end part of a conductor leaf 12 is superposed on the top surface of a pattern 11 and the other end part thereof on the top surface of an electrode 3, and the conduc tor leaf 12 is connected to the electrode 3 and the pattern 11 by laser welding, ultra sonic welding or the like. Since the photoelectronic component 1 and a chip component 6 are connected together through the intermediary of the conductor lead 12 in this way, no distortion occurs in the waveform of a base band signal because of the small inductance of the conductor leaf 12 even when the band of the signal is of high fre quency. Besides, heat dissipation is effected sufficiently, since the photoelectronic component 1 is in close contact with a substrate 5 having excellent heat conductivity and a large heat dissipation area, not only on the base surface but also on the three side surfaces. |
| 公开日期 | 1988-03-26 |
| 申请日期 | 1986-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63044]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HIRONISHI KAZUO,HORIMATSU TETSUO,SONETSUJI NOBORU,et al. Package structure of photoelectronic component. JP1988067792A. 1988-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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