Photo electron device
文献类型：专利
| 作者 | MATSUMOTO YOSHITOSHI; TAKENAKA TOMOHIKO |
| 发表日期 | 1988-05-12 |
| 专利号 | JP1988107185A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo electron device |
| 英文摘要 | PURPOSE:To enable the parasitic inductance and stray capacity of the leads and the like to be reduced by forming the part of two leads to be connected to the electrodes of a laser diode chip which is projecting from the principal surface of the stem into a flat plate structure having a large surface area, and covering the region except the wire bonding region at the tip with an insulator. CONSTITUTION:The part of leads 5 for a laser diode projecting from the principal surface of a stem 1 is designed so as to stably drive a semiconductor laser deive in the high-frequency region. That is, the lead parts 6 for a laser diode projecting above the principal surface of the stem 1 form a flat plate structure and reduce the parasitic inductance by increasing the surface area. Also, the region except a wire bonding region 13 in the upper lead end for wire connection is covered with an insulator 14, e.g., tetraethylene fluoride resin, so as to prevent the occurrence of electromagnetic induction to other leads as shown by dots in the figure. |
| 公开日期 | 1988-05-12 |
| 申请日期 | 1986-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MATSUMOTO YOSHITOSHI,TAKENAKA TOMOHIKO. Photo electron device. JP1988107185A. 1988-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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