Charge-injection type semiconductor laser
文献类型：专利
| 作者 | NOBUHARA HIROYUKI |
| 发表日期 | 1988-11-15 |
| 专利号 | JP1988278292A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Charge-injection type semiconductor laser |
| 英文摘要 | PURPOSE:To execute a light-extinction operation (a pinch-off operation) at high speed by a structure wherein a carrier during its traveling gets over a barrier of a superlattice layer and is injected into an active layer so that the carrier is extinguished quickly. CONSTITUTION:While a potential difference is caused between an n-electrode (B) 19 and an n-electrode (A) 18, an electron travels from a disorder layer 16 through a superlattice layer 15 toward a disorder layer 17. The electron becomes a hot electron during traveling; it gets over a quantum barrier layer of the superlattice layer 15 and is injected into an active layer 14 under an electric field of a p electrode 20 and between the n-electrode (B) 19 and the n-electrode (A) 18. It couples with a hole in the active layer, and the light is emitted. Because this semiconductor laser emits light only when an electric charge gets over the quantum well barrier layer and is injected, few electric charges remain in the active layer; when a signal is turned off, the carrier is extinguished so quickly; a light-extinction operation is executed at high speed. |
| 公开日期 | 1988-11-15 |
| 申请日期 | 1987-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63081]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI. Charge-injection type semiconductor laser. JP1988278292A. 1988-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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