Arrayed semiconductor laser
文献类型：专利
| 作者 | SONEHARA TOMIO; YOKOYAMA OSAMU; INOUE KUNIHIRO; KOMATSU HIROSHI; TERAISHI KATSUHIRO |
| 发表日期 | 1989-02-16 |
| 专利号 | JP1989044083A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Arrayed semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a large output laser which can be used similarly to a single chip, by narrowing a light irradiating spot interval of optically coupling direction as compared with the interval of noncoupling direction in a laser in which a plurality of semiconductor lasers are integrated in a plane. CONSTITUTION:The interval of light emitting spots 101 of optically coupling direction is narrowed as compared with that of noncoupling direction. Further, the light emitting spot shape of a semiconductor laser is substantially rectangular, formed of the spots in a matrix state in a structure in which lights are radiated from a substrate surface formed with the lasers or the surface of a thin film formed on a substrate 10 That is, an optical coupling is generated stronger in a direction necessary for the spots, and oscillated in phase synchronization. Thus, a two-dimensional phase synchronous oscillation can be easily generated to perform a laser oscillation of large output. |
| 公开日期 | 1989-02-16 |
| 申请日期 | 1987-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63092]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SONEHARA TOMIO,YOKOYAMA OSAMU,INOUE KUNIHIRO,et al. Arrayed semiconductor laser. JP1989044083A. 1989-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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