Array-type semiconductor laser device
文献类型：专利
| 作者 | YAMANAKA YUTAKA |
| 发表日期 | 1989-02-23 |
| 专利号 | JP1989049291A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Array-type semiconductor laser device |
| 英文摘要 | PURPOSE:To execute a monitoring operation without affecting a laser characteristic by a method wherein an array-type detector whose photodetecting face is faced with the upper face of a heat-sink substrate is installed in the vicinity of the end of one side of an array-type semiconductor laser. CONSTITUTION:An array-type semiconductor laser 2 and an array-type detector 3 via a spacer 4 are installed on a heat-sink substrate The detector 3 is installed in such a way that its photodetecting face 6 is faced downward and that a gap is secured between the face and the substrate One part of a beam radiated from the end of the laser 2 is absorbed by the photodetecting face 6; its remaining part is reflected by the lower face of the detector 3 situated above the substrate 1 ; accordingly, a laser output does not become unstable. In addition, because a laser electrode 5 is installed under the photodetecting face of the detector 3, a sufficient width can be secured. Accordingly, the laser output can be monitored without affecting a laser characteristic and independently. |
| 公开日期 | 1989-02-23 |
| 申请日期 | 1987-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63095]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | YAMANAKA YUTAKA. Array-type semiconductor laser device. JP1989049291A. 1989-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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